data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 kbp005 thru kbp10 technical sp eci f ications of single-phase silicon bridge rectifie r voltage range-5 0 to 1000 volt s current-2.0 amperes fe a t ures ?e ideal for printed circui t b oard ?e surge ov erload r a ting : 50 ampere s peak ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e ca se :molded pla s ti c ?e epoxy : ul 94 v - 0 rate flame ret a rdan t ?e l ead: mil-std-2 02e,me t hod 208 gu aranteed ?e polari ty : sy mbols molded or mar k ed on body ?e m o u n ting po si tio n : any ?e w e ight: 2.74 gra m s m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ?e ra ting s a t 25 j ambien t tempera t ure unle s s o t herw i se sp eci f ied . ?e single pha se, hal f w a v e , 60 hz, resi stiv e or indu ctiv e load. ?e for capa citiv e lo ad, dera t e curre nt b y 20%. kbp005 kbp01 k bp02 kbp04 k b p 0 6 k b p 0 8 kbp10 sy m b ol uni ts m a x i mum recurre n t peak rev e rse v o ltage vrrm 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 v o l t s m a x i mum r m s bri dge i nput vo l t age vrms 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 v o l t s m a x i mum dc blo cking voltage vdc 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 v o l t s m a x i mum a verage for w a rd output t a = 50 j io 2 . 0 a m p s peak for w a rd surge current 8.3 m s single ha lf sine- w av e super i mposed on r a ted l o ad (j edec method) if sm 5 0 a m p s m a x i mum for w a rd voltage d r op per e l ement at 1 . 0 a dc v f 1 . 0 v o l t s @t a = 25 j 5 m a xi mum dc rever s e cur r e nt at rated dc bl ocki n g vol t age per element @t a = 100 j ir 500 amp i 2 t rati ng fo r fusing(t<8. 3ms) i 2 t 1 0 a2sec t y pi cal juncti on ca pacitance(note 1) c j 1 5 p f oper ati ng temp erature range tj -55 to + 1 50 j stor age tempe r atur e range tstg -55 to + 150 j notes: 1 . mea s ure d at 1 mhz and app lied rev e rse v o ltage of 4 . 0 v o lts 2 . thermal resi stance from j unction to ambien t and from ju nction to lead mounted o n p.c.b w i th 0 . 47x 0.47?(12x 12mm)copper pads. kbp/rs2 unit:inch(mm) . 600 ( 1 5.2 ) . 560 ( 14 . 2 ) . 46 ( 11. 7 ) . 42 ( 10 . 7 ) ( 12.7 ) min ( 1.4 ) . 50 1.0 .03 4 ( 0.86 ) dia. .028 ( 0. 71 ) typ . .160 ( 4.1 ) .140 ( 3.6 ) .1 5 3 ( 3 .9 ) . 13 0 ( 3.3 ) ac ( 15.2 ) min
http://www.yeashin.com 2 rev.02 20120305 kbp005 thru kbp10 device characteristics
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